Part Number
|
SSD3030N |
Manufacturer
|
South Sea Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Sep 18, 2014 |
Detailed Description
|
SSD3030N
N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (m ) Max
D
TO-252
17 @VGS = 10V 30V ...
|
Datasheet
|
SSD3030N
|
Overview
SSD3030N
N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (m ) Max
D
TO-252
17 @VGS = 10V 30V 30A 35 @VGS = 4.
5V
G S
D
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 package.
Pb Free.
S G
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
30 + - 20 30 70 20 50 -55 to 175
Unit
V V A A A W
o
Drain-Source Diode Forward Current
a
IS
o
Maximum Power Dissipation @TC = 25 C Operating Junction and Storage Temperature Range
PD TJ, TSTG
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junctio...
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