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SSD3030N

South Sea Semiconductor
Part Number SSD3030N
Manufacturer South Sea Semiconductor
Description N-Channel MOSFET
Published Sep 18, 2014
Detailed Description SSD3030N N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (m ) Max D TO-252 17 @VGS = 10V 30V ...
Datasheet PDF File SSD3030N PDF File

SSD3030N
SSD3030N

Overview
SSD3030N N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (m ) Max D TO-252 17 @VGS = 10V 30V 30A 35 @VGS = 4.
5V G S D FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 package.
Pb Free.
S G ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 30 + - 20 30 70 20 50 -55 to 175 Unit V V A A A W o Drain-Source Diode Forward Current a IS o Maximum Power Dissipation @TC = 25 C Operating Junction and Storage Temperature Range PD TJ, TSTG C THERMAL CHARACTERISTICS Thermal Resistance, Junctio...


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