SSM3K131TU
TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
SSM3K131TU
○ High-Speed Switching Applications
• 4.
5-V drive • Low ON-resistance : Ron = 41.
5 mΩ (max) (@VGS = 4.
5 V)
: Ron = 27.
6 mΩ (max) (@VGS = 10 V)
2.
1±0.
1 1.
7±0.
1
Unit: mm
0.
3-+00.
.
015
2.
0±0.
1 0.
65±0.
05
0.
166±0.
05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS
30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC
ID (Note 1)
6.
0
A
Pulse
IDP (Note 1)
12.
0
PD (Note 2)
800
Drain power dissipation
PD (Note 3)
500
mW
t = 10 s
1000
0.
7±0.
05
1
2
3
Channel temperature
Tch
150
°C
1: Gate
Storage temperature range
Tstg
...