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SSM3K131TU

Toshiba Semiconductor
Part Number SSM3K131TU
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Sep 18, 2014
Detailed Description SSM3K131TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K131TU ○ High-Speed Switching Appl...
Datasheet PDF File SSM3K131TU PDF File

SSM3K131TU
SSM3K131TU


Overview
SSM3K131TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K131TU ○ High-Speed Switching Applications • 4.
5-V drive • Low ON-resistance : Ron = 41.
5 mΩ (max) (@VGS = 4.
5 V) : Ron = 27.
6 mΩ (max) (@VGS = 10 V) 2.
1±0.
1 1.
7±0.
1 Unit: mm 0.
3-+00.
.
015 2.
0±0.
1 0.
65±0.
05 0.
166±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V Drain current DC ID (Note 1) 6.
0 A Pulse IDP (Note 1) 12.
0 PD (Note 2) 800 Drain power dissipation PD (Note 3) 500 mW t = 10 s 1000 0.
7±0.
05 1 2 3 Channel temperature Tch 150 °C 1: Gate Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high UFM 2: Source 3: Drain temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/ voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating JEDEC JEITA TOSHIBA ― ― 2-2U1A Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Weight: 6.
6mg (typ.
) Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on a ceramic board.
(25.
4 mm × 25.
4 mm × 0.
8 mm, Cu Pad: 645 mm2) Note 3: Mounted on an FR4 board.
(25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 645 mm2) Electrical Characteristics (Ta = 25°C) Characteristic Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain–source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching time Turn-on time Tur...



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