SSM6K406TU
TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type
SSM6K406TU
○ High-Speed Switching Applications
• 4.
5-V drive • Low ON-resistance: Ron = 38.
5 mΩ (max) (@VGS = 4.
5 V)
Ron = 25.
0 mΩ (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS
30
V
Gate–source voltage
VGSS
±20
V
Drain current
DC
ID
Pulse
IDP
4.
4 A
8.
8
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cau...