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SSM6K406TU

Part Number	SSM6K406TU
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel MOSFET
Published	Sep 18, 2014
Detailed Description	SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU ○ High-Speed Switching Applications ...
Datasheet	SSM6K406TU PDF File

Overview

SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU ○ High-Speed Switching Applications • 4.
5-V drive • Low ON-resistance: Ron = 38.
5 mΩ (max) (@VGS = 4.
5 V) Ron = 25.
0 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 30 V Gate–source voltage VGSS ±20 V Drain current DC ID Pulse IDP 4.
4 A 8.
8 Drain power dissipation PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cau...

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SSM6K406TU Silicon N-Channel MOSFET - Toshiba Semiconductor

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