Part Number
|
SSM6N57NU |
Manufacturer
|
Toshiba Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Sep 18, 2014 |
Detailed Description
|
MOSFETs Silicon N-Channel MOS
SSM6N57NU
1. Applications
• Power Management Switches • DC-DC Converters
2. Features
(1) 1...
|
Datasheet
|
SSM6N57NU
|
Overview
MOSFETs Silicon N-Channel MOS
SSM6N57NU
1.
Applications
• Power Management Switches • DC-DC Converters
2.
Features
(1) 1.
8 V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 39.
1 mΩ (max) (@VGS = 4.
5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.
5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.
8 V)
3.
Packaging and Internal Circuit
UDFN6
SSM6N57NU
1.
Source1 (S1) 2.
Gate1 (G1) 3.
Drain2 (D2) 4.
Source2 (S2) 5.
Gate2 (G2) 6.
Drain1 (D1)
©2019-2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2012-07
2021-09-17 Rev.
4.
0
SSM6N57NU
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�) (Q1,Q2 Common)
Characteristics
Symbol
Rating
Unit
...
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