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SSM6N57NU

Toshiba Semiconductor
Part Number SSM6N57NU
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 18, 2014
Detailed Description MOSFETs Silicon N-Channel MOS SSM6N57NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1...
Datasheet PDF File SSM6N57NU PDF File

SSM6N57NU
SSM6N57NU

Overview
MOSFETs Silicon N-Channel MOS SSM6N57NU 1.
Applications • Power Management Switches • DC-DC Converters 2.
Features (1) 1.
8 V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 39.
1 mΩ (max) (@VGS = 4.
5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.
5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.
8 V) 3.
Packaging and Internal Circuit UDFN6 SSM6N57NU 1.
Source1 (S1) 2.
Gate1 (G1) 3.
Drain2 (D2) 4.
Source2 (S2) 5.
Gate2 (G2) 6.
Drain1 (D1) ©2019-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2021-09-17 Rev.
4.
0 SSM6N57NU 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�) (Q1,Q2 Common) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±12 Drain current (DC) (Note 1) ID 4 A Drain current (pulsed) (Note 1), (Note 2) IDP 10 Power dissipation Power dissipation Channel temperature (Note 3) PD t ≤ 10 s (Note 3) PD Tch 1 W 2 W 150 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150�.
Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1% Note 3: PD for the entire IC Device mounted on a 25.
4 mm × 25.
4 mm × 1.
6 mm FR4 glass epoxy board (Cu pad: 645 mm2) Note: Note: The MOSFETs in this device are sensitive to electrostatic discharge.
When handling this device, the worktables, operators, soldering irons and ...


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