SSM5H14F
Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial
Schottky Barrier Diode
SSM5H14F
○ Fuse cut applications of the battery pack
• • • 1.
8-V drive An N-ch MOSFET and a
Schottky Barrier Diode in one package.
Low RDS (ON) and Low VF Unit: mm
Absolute Maximum Ratings
MOSFET (Ta = 25°C)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Rating 30 ±12 3.
0 6.
0 0.
75 150 Unit V V A W °C
1.
Gate 2.
Source 3.
Anode 4.
Cathode 5.
Drain
Schottky Diode (Ta = 25°C)
Characteristics Maximum (peak) reverse Voltage Reverse voltage Average forward current Maximum (peak) forward current S...