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SSM5H12TU

Toshiba Semiconductor
Part Number SSM5H12TU
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Diode
Published Sep 19, 2014
Detailed Description SSM5H12TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter Applic...
Datasheet PDF File SSM5H12TU PDF File

SSM5H12TU
SSM5H12TU

Overview
SSM5H12TU Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter Applications • • • 1.
8-V drive Combined an N-ch MOSFET and a Schottky barrier diode in one package.
Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) t = 10s Tch Rating 30 ± 12 1.
9 3.
8 0.
5 0.
8 150 Unit V V A Power dissipation Channel temperature W °C UFV JEDEC ― ― 2-2R1A Schottky Barrier Diode (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current Junction temperature Symbol VRRM IF(AV) IFSM Tj Rating 30 0.
7 2 (50Hz) 125 Unit V A A °C JEITA TOSHIBA Weight: 7 mg (typ.
) MOSFET and Diode (Ta = 25°C) Characteristics Storage temperature range Symbol Tstg Rating −55 to 125 Unit °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/c...


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