SSM3J36TU
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type
SSM3J36TU
○ Power Management Switches
• • 1.
5-V drive Low ON-resistance: Ron = 3.
60 Ω (max) (@VGS = -1.
5 V) : Ron = 2.
70 Ω (max) (@VGS = -1.
8 V) : Ron = 1.
60 Ω (max) (@VGS = -2.
8 V) : Ron = 1.
31 Ω (max) (@VGS = -4.
5 V)
0.
65±0.
05 2.
0±0.
1 1 2 3 0.
166±0.
05
1: Gate 2: Source 3: Drain
Unit: mm
2.
1±0.
1 1.
7±0.
1 +0.
1 0.
3 -0.
05
Absolute Maximum Ratings (Ta = 25 °C)
Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) PD (Note2) Tch Tstg Rating -20 ±8 -330 -660 500 800 150 −55 to 150 Unit V V mA mW °C...