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SSM3J36MFV

Toshiba Semiconductor
Part Number SSM3J36MFV
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 19, 2014
Detailed Description SSM3J36MFV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36MFV ○ Power Management Switches • • 1.5-V ...
Datasheet PDF File SSM3J36MFV PDF File

SSM3J36MFV
SSM3J36MFV

Overview
SSM3J36MFV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36MFV ○ Power Management Switches • • 1.
5-V drive Low ON-resistance: Ron = 3.
60 Ω (max) (@VGS = -1.
5 V) : Ron = 2.
70 Ω (max) (@VGS = -1.
8 V) : Ron = 1.
60 Ω (max) (@VGS = -2.
8 V) : Ron = 1.
31 Ω (max) (@VGS = -4.
5 V) Unit: mm 0.
22±0.
05 1.
2±0.
05 Absolute Maximum Ratings (Ta = 25 °C) 1.
2±0.
05 0.
8±0.
05 Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating -20 ±8 -330 -660 150 150 −55 to 150 Unit V V 0.
4 1 2 3 mW °C °C 0.
5±0.
05 1.
Gate Source Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolut...


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