SSM6N15AFE
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U-MOS III)
SSM6N15AFE
Load Switching Applications
• • • 2.
5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.
6 Ω (max) (@VGS = 4.
0 V) RDS(ON) = 6.
0 Ω (max) (@VGS = 2.
5 V)
1.
6±0.
05 1.
2±0.
05
Unit: mm
1.
6±0.
05
(Q1, Q2 Common)
5 4
3
Characteristics Drain-Source voltage Gate-Source voltage Drain current Power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 400 150 150 −55 to 150 Unit
V mA
1.
Source1 mW °C °C 2.
Gate1
4.
Source2 5.
Gate2 6.
Drain1
ES6
JEDEC
3.
Drain2
―
Using continuously under heavy loads (e.
g.
the application of JEITA ― ...