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SSM6N15AFE

Toshiba Semiconductor
Part Number SSM6N15AFE
Manufacturer Toshiba Semiconductor
Description MOSFET
Published Sep 19, 2014
Detailed Description SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Application...
Datasheet PDF File SSM6N15AFE PDF File

SSM6N15AFE
SSM6N15AFE

Overview
SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications • • • 2.
5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.
6 Ω (max) (@VGS = 4.
0 V) RDS(ON) = 6.
0 Ω (max) (@VGS = 2.
5 V) 1.
6±0.
05 1.
2±0.
05 Unit: mm 1.
6±0.
05 (Q1, Q2 Common) 5 4 3 Characteristics Drain-Source voltage Gate-Source voltage Drain current Power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 400 150 150 −55 to 150 Unit V mA 1.
Source1 mW °C °C 2.
Gate1 4.
Source2 5.
Gate2 6.
Drain1 ES6 JEDEC 3.
Drain2 ― Using continuously under heavy loads (e.
g.
the application of JEITA ― high temperature/current/voltage and the significant change in TOSHIBA 2-2N1D temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
Weight: 3.
0 mg (typ.
) operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating Mounted on FR4 board (25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 0.
135 mm2 × 6) 0.
3 mm Note: Marking 6 5 4 0.
45 mm Equivalent Circuit (top view) 6 5 4 DI 1 2 3 1 Q1 Q2 2 3 1 2010-11-22 0.
12±0.
05 V 0.
55±0.
05 0.
2±0.
05 Absolute Maximum Ratings (Ta = 25°C) 1.
0±0.
05 0.
5 0.
5 1 2 6 SSM6N15AFE Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⎪Yfs⎪ RDS (ON) Ciss Coss Crss ton tof...


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