SSM6N36TU
TOSHIBA Field-Effect
Transistor Silicon N-Channel MOS Type
SSM6N36TU
○ High-Speed Switching Applications
• • 1.
5-V drive Low ON-resistance: Ron = 1.
52 Ω (max) (@VGS = 1.
5 V) : Ron = 1.
14 Ω (max) (@VGS = 1.
8 V)
0.
65 0.
65 2.
0±0.
1 1.
3±0.
1 2.
1±0.
1 1.
7±0.
1
Unit: mm
: Ron = 0.
66 Ω (max) (@VGS = 4.
5 V) : Ron = 0.
63 Ω (max) (@VGS = 5.
0 V)
2 3
5 4
Characteristics Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse
Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg
Rating 20 ± 10 500 1000 500 150 −55 to 150
Unit V V mA mW °C °C
0.
7±0.
05
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
1.
Source1
4.
Source2 5...