SSM6N43FU
TOSHIBA Field-Effect
Transistor Silicon N Channel MOS Type
SSM6N43FU
○ High-Speed Switching Applications
• • 1.
5-V drive Low ON-resistance : RDS(ON) = 1.
52 Ω (max) (@VGS = 1.
5V) : RDS(ON) = 1.
14 Ω (max) (@VGS = 1.
8V) : RDS(ON) = 0.
85 Ω (max) (@VGS = 2.
5V) : RDS(ON) = 0.
66 Ω (max) (@VGS = 4.
5V) : RDS(ON) = 0.
63 Ω (max) (@VGS = 5.
0V) Unit: mm
Absolute Maximum Ratings (Ta = 25°C) (Q1,Q2 Common)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating 20 ± 10 500 1000 200 150 −55 to 150 Unit V V mA mW °C °C
1.
SOURCE1 2.
GATE1 3.
DRAIN2
4.
SOURC...