DatasheetsPDF.com

SSM6N43FU

Toshiba Semiconductor
Part Number SSM6N43FU
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 19, 2014
Detailed Description SSM6N43FU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N43FU ○ High-Speed Switching Applications • • ...
Datasheet PDF File SSM6N43FU PDF File

SSM6N43FU
SSM6N43FU

Overview
SSM6N43FU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N43FU ○ High-Speed Switching Applications • • 1.
5-V drive Low ON-resistance : RDS(ON) = 1.
52 Ω (max) (@VGS = 1.
5V) : RDS(ON) = 1.
14 Ω (max) (@VGS = 1.
8V) : RDS(ON) = 0.
85 Ω (max) (@VGS = 2.
5V) : RDS(ON) = 0.
66 Ω (max) (@VGS = 4.
5V) : RDS(ON) = 0.
63 Ω (max) (@VGS = 5.
0V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1,Q2 Common) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating 20 ± 10 500 1000 200 150 −55 to 150 Unit V V mA mW °C °C 1.
SOURCE1 2.
GATE1 3.
DRAIN2 4.
SOURCE2 5.
GATE2 6.
DRAIN1 US6 Note: JEDEC ― Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in JEITA ― temperature, etc.
) may cause this product to decrease in the TOSHIBA 2-2J1C reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the Weight: 6.
8 mg (typ.
) absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Total rating Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 NS 1 2 3 1 Q1 Q2 2 3 1 2011-06-07 SSM6N43FU Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Drain-Source breakdown voltage Drain cut-off current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth |Yfs| Test Condition ID = 1 mA, VGS = 0 V ID = 1 mA, VGS = - 10 V VDS = 20 V, VGS = 0 V VGS = ±8 V, VDS = 0 V VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 200 mA ID = 200 mA, VGS = 5.
0 V ID = 200 mA, VGS = 4.
5 V Drain-Source ON resistance RDS (ON) ID = 200 mA, VGS...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)