SSM6N7002AFU
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type
SSM6N7002AFU
High Speed Switching Applications Analog Switch Applications
Unit: mm • • Small package Low ON resistance : Ron = 3.
3 Ω (max) (@VGS = 4.
5 V) : Ron = 3.
2 Ω (max) (@VGS = 5 V) : Ron = 3.
0 Ω (max) (@VGS = 10 V)
2.
1±0.
1
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
0.
65 0.
65 2.
0±0.
2 1.
3±0.
1
1.
25±0.
1
Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse
Symbol VDS VGSS ID IDP PD (Note) Tch Tstg
Rating 60 ± 20 200 800 300 150 −55~150
Unit V V
1 2 3
6 5 4
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
mW °C °C
0.
9±0.
1
mA
Note: Total r...