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SSM6N7002AFU

Part Number	SSM6N7002AFU
Manufacturer	Toshiba Semiconductor
Description	MOSFET
Published	Sep 19, 2014
Detailed Description	SSM6N7002AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002AFU High Speed Switching Applications ...
Datasheet	SSM6N7002AFU PDF File

Overview

SSM6N7002AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7002AFU High Speed Switching Applications Analog Switch Applications Unit: mm • • Small package Low ON resistance : Ron = 3.
3 Ω (max) (@VGS = 4.
5 V) : Ron = 3.
2 Ω (max) (@VGS = 5 V) : Ron = 3.
0 Ω (max) (@VGS = 10 V) 2.
1±0.
1 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 0.
65 0.
65 2.
0±0.
2 1.
3±0.
1 1.
25±0.
1 Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note) Tch Tstg Rating 60 ± 20 200 800 300 150 −55~150 Unit V V 1 2 3 6 5 4 Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range mW °C °C 0.
9±0.
1 mA Note: Total rating, mounted on FR4 board 2 (25.
4 mm × 25.
4 mm × 1.
6 t, Cu Pad: 0.
32mm × 6) 0.
4 mm 0.
8 mm JEDEC 1.
SOURCE1 JEITA 2.
GATE1 3.
DRAIN2 TOSHIBA ― 4.
SOURCE2 ― 5.
GATE2 6.
DRAIN1 2-2J1C US6 0.
012 g (typ.
) Weight: Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 NK 1 2 3 1 Q1 Q2 2 3 Handling Precau...

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SSM6N7002AFU MOSFET - Toshiba Semiconductor

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