TK3A60DA
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK3A60DA
Switching
Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 2.
2 Ω(typ.
) High forward transfer admittance: |Yfs| = 1.
5 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 2.
5 10 30 180 2.
5 3.
0 150 −55 to 150 Unit V V A W mJ A mJ °C °C
1: Gate 2: Drain 3: Source
Drain power dissipation (Tc = 25°C) Single puls...