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TK3A60DA

Toshiba Semiconductor
Part Number TK3A60DA
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Sep 19, 2014
Detailed Description TK3A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK3A60DA Switching Regulator Applications ...
Datasheet PDF File TK3A60DA PDF File

TK3A60DA
TK3A60DA

Overview
TK3A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK3A60DA Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 2.
2 Ω(typ.
) High forward transfer admittance: |Yfs| = 1.
5 S (typ.
) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.
4 to 4.
4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 2.
5 10 30 180 2.
5 3.
0 150 −55 to 150 Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25°C) Single puls...


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