Part Number
|
AP9575AGJ |
Manufacturer
|
Advanced Power Electronics |
Description
|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Sep 27, 2014 |
Detailed Description
|
AP9575AGJ
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Higher Gate-Source Voltage ▼ Simple Drive Requireme...
|
Datasheet
|
AP9575AGJ
|
Overview
AP9575AGJ
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Higher Gate-Source Voltage ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-60V 64mΩ -17A
Description
The TO-251 package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC/DC converters.
G D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating -60 ±30 -17 -11 -60 36 0.
29 -55 to 150 -55 ...
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