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AP9575AGJ

Advanced Power Electronics
Part Number AP9575AGJ
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP9575AGJ RoHS-compliant Product Advanced Power Electronics Corp. ▼ Higher Gate-Source Voltage ▼ Simple Drive Requireme...
Datasheet PDF File AP9575AGJ PDF File

AP9575AGJ
AP9575AGJ

Overview
AP9575AGJ RoHS-compliant Product Advanced Power Electronics Corp.
▼ Higher Gate-Source Voltage ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -60V 64mΩ -17A Description The TO-251 package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC/DC converters.
G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -60 ±30 -17 -11 -60 36 0.
29 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 3.
5 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200705071-1/4 AP9575AGJ Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-12A VDS=VGS, ID=-250uA VDS=-10V, ID=-9A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS= ±30V ID=-9A VDS=-48V VGS=-10V VDS=-30V ID=-9A RG=3.
3Ω,VGS=-10V RD=3.
3Ω VGS=0V VDS=-25V f=1.
0MHz Min.
-60 -1 - Typ.
8.
8 25 3.
4 10 11 38 26 64 970 150 115 Max.
Units 64 -3 -10 -25 ±100 40 1550 V mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Re...


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