Part Number
|
AP1003BST |
Manufacturer
|
Advanced Power Electronics |
Description
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Sep 27, 2014 |
Detailed Description
|
AP1003BST
Preliminary
Advanced Power Electronics Corp.
▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( 0.7...
|
Datasheet
|
AP1003BST
|
Overview
AP1003BST
Preliminary
Advanced Power Electronics Corp.
▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( 0.
7mm ) G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 4.
7mΩ 17.
3A
Description
The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible.
The GreenFETTM package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC converters.
GreenFETTM
D
G
S S D
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ ID@TC=25℃ IDM PD@TA=25℃ P...
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