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AP1003BST

Advanced Power Electronics
Part Number AP1003BST
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 27, 2014
Detailed Description AP1003BST Preliminary Advanced Power Electronics Corp. ▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7...
Datasheet PDF File AP1003BST PDF File

AP1003BST
AP1003BST

Overview
AP1003BST Preliminary Advanced Power Electronics Corp.
▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.
7mm ) G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 4.
7mΩ 17.
3A Description The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible.
The GreenFETTM package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC converters.
GreenFETTM D G S S D Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ ID@TC=25℃ IDM PD@TA=25℃ PD@TA=70℃ PD@TC=25℃ EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 3 4 5 3 3 4 ST Rating 30 +20 17.
3 14.
3 75 150 2.
2 1.
4 42 28.
8 24 -40 to 150 -40 to 150 Units V V A A A A W W W mJ A ℃ ℃ Total Power Dissipation Total Power Dissipation Total Power Dissipation Avalanche Current 1 Single Pulse Avalanche Energy Storage Temperature Range Operating Junction Temperature Range Thermal Data Rthj-c Rthj-a Maximum Thermal Resistance, Junction-ambient4 Maximum Thermal Resistance, Junction-ambient 3 3 58 ℃/W ℃/W 1 20100809pre Data and specifications subject to change without notice AP1003BST Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=13A VGS=4.
5V, ID=11A Min.
30 1.
35 13 - Typ.
3.
6 5.
2 23 12 3 6 10 41 22 7.
6 400 170 1.
1 Max.
Units 4.
7 7.
5 2.
35 1 150 +100 19.
2 2 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Ω VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o VD...


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