Part Number
|
HAT1016R |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon P-Channel Power MOSFET |
Published
|
Mar 23, 2005 |
Detailed Description
|
HAT1016R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-471 D (Z) 5th. Edition February 1999 Featur...
|
Datasheet
|
HAT1016R
|
Overview
HAT1016R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-471 D (Z) 5th.
Edition February 1999 Features
• • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting
Outline
SOP–8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
HAT1016R
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings – 30 ± 20 – 4.
5 – 36 – 4.
5
Unit V V A A A W W °C °C
Body–drain diode reverse drain current I DR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch ...
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