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HAT1016R

Renesas
Part Number HAT1016R
Manufacturer Renesas
Description Silicon P-Channel Power MOSFET
Published May 2, 2023
Detailed Description HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate ...
Datasheet PDF File HAT1016R PDF File

HAT1016R
HAT1016R

Overview
HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of 4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 56 DD 87 65 1 234 2 4 G G S1 MOS1 S3 MOS2 REJ03G1142-0700 (Previous: ADE-208-471E) Rev.
7.
00 Sep 07, 2005 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain Rev.
7.
00 Sep 07, 2005 page 1 of 7 HAT1016R Absolute Maximum Ratings Item Symbol Value Drain to source voltage Gate to source voltage VDSS –30 VGSS ±20 Drain current Drain peak current ID ID (pulse) Note 1 –4.
5 –36 Body-drain diode reverse drain current Channel dissipation Channel dissipation IDR Pch Note 2 Pch Note 3 –4.
5 2 3 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.
6 mm), PW ≤ 10 s 3.
2 Drive operation: When using the glass ep...


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