FDS6900AS
May 2005
FDS6900AS
General Description
Dual N-Ch PowerTrench® SyncFET™
Features
• Q2: Optimized to minimize conduction losses Includes SyncFET
Schottky body diode RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 28mΩ @ VGS = 4.
5V • Q1: Optimized for low switching losses Low Gate Charge (11nC typical) RDS(on) = 27mΩ @ VGS = 10V RDS(on) = 34mΩ @ VGS = 4.
5V • 100% RG (Gate Resistance) Tested The FDS6900AS is designed to replace two single SO8 MOSFETs and
Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices.
FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs des...