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FDS6900S


Part Number FDS6900S
Manufacturer Fairchild Semiconductor
Title Dual N-Ch PowerTrench SyncFet
Description The FDS6900S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral...
Features
• Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 29mΩ @ VGS = 4.5V
• Q1: Optimized for low switching losses Low Gate Charge ( 8 nC typical) RDS(on) = 30mΩ @ VGS = 10V RDS(on) = 37mΩ @ VGS = 4.5V 8.2A, 30V 6.9A, 30V S1D2 D S1D2...

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FDS6900AS : The FDS6900AS is designed to replace two single SO−8 MOSFETs and Schottky diode in synchronous dc−dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30 V, N−channel, logic level, POWERTRENCH MOSFETs designed to maximize power conversion efficiency. The high−side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology. Features • Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Dio.

FDS6900AS : Dual N-Ch PowerTrench® SyncFET™ Features • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 28mΩ @ VGS = 4.5V • Q1: Optimized for low switching losses Low Gate Charge (11nC typical) RDS(on) = 27mΩ @ VGS = 10V RDS(on) = 34mΩ @ VGS = 4.5V • 100% RG (Gate Resistance) Tested The FDS6900AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The .

FDS6900AS-G : The FDS6900AS is designed to replace two single SO−8 MOSFETs and Schottky diode in synchronous dc−dc power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30 V, N−channel, logic level, POWERTRENCH MOSFETs designed to maximize power conversion efficiency. The high−side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology. Features • Q2: Optimized to Minimize Conduction Losses Includes SyncFET Schottky Body Dio.




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