HAT2036R Silicon N Channel Power MOS FET Power Switching ADE-208-665B(Z) Target specification 3rd.
Edition May 1998 Features • Low on-resistance R DS(on) =12mΩ typ • Capable of 4.
5 V gate drive • Low drive current • High density mounting • High speed switching tf=60ns typ.
Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT2036R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse) * I DR Pch* Tch Tstg 2 1 Ratings 30 ±20 12 96 12 2.
5 15...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)