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HAT2038R

Hitachi Semiconductor
Part Number HAT2038R
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C (Z) 4th. Edition February 19...
Datasheet PDF File HAT2038R PDF File

HAT2038R
HAT2038R

Overview
HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C (Z) 4th.
Edition February 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2038R/HAT2038RJ Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT2038R HAT2038RJ Avalanche energy HAT2038R HAT2038RJ Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1.
2.
3.
4.
Pch Pch Tch Tstg Note2 Note3 Symbol VDSS VGSS ID I D(pulse) I DR I AP Note4 Note1 Ratings 60 ± 20 5 40 5 — 5 Unit V V A A A — A — mJ W W °C °C EAR Note4 — 2.
14 2 3 150 – 55 to + 150 PW ≤ 10 µs, duty cycle ≤ 1 % 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10s 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.
6 mm), PW≤ 10s Value at Tch=25°C, Rg≥50Ω 2 HAT2038R/HAT2038RJ Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT2038R HAT2038RJ HAT2038R HAT2038RJ Symbol V(BR)DSS V(BR)GSS I GSS I DSS I DSS I DSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Min 60 ± 20 — — — — — 1.
2 — — 6 — — — — — — — — — Typ — — — — — — — — Max — — ± 10 1 0.
1 — 10 2.
2 Unit V V µA µA µA µA µA V VDS = 48 V, VGS = 0 Ta = 125°C VDS = 10 V, I D = 1 mA I D = 3 A, VGS = 10 V Note5 I D = 3 A, VGS = 4 V Note5 I D = 3 A, VDS = 10 V Note5 VDS = 10 V VGS = 0 f = 1MHz VGS =10 V, ID = 3 A VDD ≅ 30 V Test Conditions I D = 10 mA, VGS = 0 I G = ± 100 µA, VDS = 0 VGS = ± 16 V, VDS = 0 VDS = 60 V, VGS = 0 Gate to source cutoff voltage Static dra...


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