Part Number
|
HY3506W |
Manufacturer
|
HOOYI |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Oct 10, 2014 |
Detailed Description
|
HY3506P/W
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V
Pin Descriptio...
|
Datasheet
|
HY3506W
|
Overview
HY3506P/W
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/190A RDS(ON) = 3.
0 mΩ (typ.
) @ VGS=10V
Pin Description
100% avalanche tested
Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
G
D
G
S
D
S
TO-220
D
TO-247
Applications
• •
Switching application
Power Management for Inverter Systems.
S G
N-Channel MOSFET
Ordering and Marking Information
Package Code
ÿ YYXXXJWW G
P HY3506
ÿ YYXXXJWW G
W HY3506
P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device
W : TO247-3L
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS.
...
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