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HY3503

HOOYI
Part Number HY3503
Manufacturer HOOYI
Description N-Channel MOSFET
Published Aug 19, 2018
Detailed Description HY3503P/B Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Sour...
Datasheet PDF File HY3503 PDF File

HY3503
HY3503

Overview
HY3503P/B Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C TC=25°C TC=100°C TC=25°C Tc=100°C RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Avalanche Energy,Single Pulsed L=0.
5mH Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=24V Rating 30 ±20 ...


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