Part Number
|
H55S5132EFR-60M |
Manufacturer
|
Hynix Semiconductor |
Description
|
512Mbit (16Mx32bit) Mobile SDR Memory |
Published
|
Oct 11, 2014 |
Detailed Description
|
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of 512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
...
|
Datasheet
|
H55S5132EFR-60M
|
Overview
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
Specification of 512M (16Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x32
This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
2 / Sep.
2010 1
il;o;nar
512Mbit (16Mx32bit) Mobile SDR Memory H55S5122EFR Series / H55S5132EFR Series
Document Title
4Bank x 4M x 32bits Synchronous DRAM
Revision History
Revision No.
History
Draft Date
Remark
1.
0 1.
1 1.
2
- First Version Release - Add AC Overshoot/Undershoot Specification - Correction
Feb.
2010 Feb.
2010 Sep.
201...
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