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H55S5132EFR-60M

Hynix Semiconductor
Part Number H55S5132EFR-60M
Manufacturer Hynix Semiconductor
Description 512Mbit (16Mx32bit) Mobile SDR Memory
Published Oct 11, 2014
Detailed Description 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array ...
Datasheet PDF File H55S5132EFR-60M PDF File

H55S5132EFR-60M
H55S5132EFR-60M

Overview
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
2 / Sep.
2010 1 il;o;nar 512Mbit (16Mx32bit) Mobile SDR Memory H55S5122EFR Series / H55S5132EFR Series Document Title 4Bank x 4M x 32bits Synchronous DRAM Revision History Revision No.
History Draft Date Remark 1.
0 1.
1 1.
2 - First Version Release - Add AC Overshoot/Undershoot Specification - Correction Feb.
2010 Feb.
2010 Sep.
201...


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