256Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 banks MT46H8M32LF/LG – 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.
micron.
com Features • • • • • • • • • • • • • • • • • • • Endur-IC™ technology VDD/VDDQ = 1.
70–1.
95V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Differential clock inputs (CK and CK#) Commands entered on each positive CK edge DQS edge-aligned with data for READs; centeraligned with data for WRITEs Four internal banks for concurrent operation Data masks (DM) for masking write data—one mask per byte Programma...

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