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MT46H8M32LF

Micron Technology
Part Number MT46H8M32LF
Manufacturer Micron Technology
Description Mobile Low-Power DDR SDRAM
Published Oct 19, 2006
Detailed Description www.DataSheet4U.com Preview‡ 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Mobile Double Data Rate (DDR) SDRAM MT46H...
Datasheet PDF File MT46H8M32LF PDF File

MT46H8M32LF
MT46H8M32LF

Overview
www.
DataSheet4U.
com Preview‡ 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Mobile Double Data Rate (DDR) SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks For a complete data sheet, please refer to www.
micron.
com/mobileds.
Features • VDD = +1.
8V ±0.
1V, VDDQ = +1.
8V ±0.
1V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • Four internal banks for concurrent operation • Data masks (DM) for masking write data–one mask per byte • Programmable burst lengths: 2, 4, 8, 16 or full page • Concurrent auto precharge option is supported • Auto refresh and self refresh modes • 1.
8V LVCMOS compatible inputs • On-chip temperature sensor to control refresh rate • Partial array self refresh (PASR) • Deep power-down (DPD) • Selectable output drive (DS) • Clock stop capability Figure 1: 60-Ball VFBGA Assignment 1 A VSS DQ15 VSSQ VDDQ DQ0 VDD 2 3 4 5 6 7 8 9 B VDDQ DQ13 DQ14 DQ1 DQ2 VSSQ C VSSQ DQ11 DQ12 DQ3 DQ4 VDDQ D VDDQ DQ9 DQ10 DQ5 DQ6 VSSQ E VSSQ UDQS DQ8 DQ7 LDQS VDDQ F VSS UDM NC A13, NC LDM VDD G CKE CK CK# WE# CAS# RAS# H A9 A11 A12 CS# BA0 BA1 J A6 A7 A8 A10/AP A0 A1 K VSS A4 A5 A2 A3 VDD Options • VDD/VDDQ • 1.
8V/1.
8V • Configuration • 16 Meg x 16 (4 Meg x 16 x 4 banks) • 8 Meg x 32 (2 Meg x 32 x 4 banks) • Plastic Package • 60-Ball VFBGA1 • 90-Ball VFBGA 2 • Timing – Cycle Time • 6ns @ CL = 3 • 7.
5ns @ CL = 3 • 10ns @ CL = 3 • Operating Temperature Range • Commercial (0° to +70°C) • Industrial (-40°C to +85°C) Marking H 16M16 8M32 TBD Table 1: Configuration Addressing 16 Meg x 16 4 Meg x 16 x 4 8K 8K (A0–A12) 4 (BA0, BA1) 1K (A0–A9) 8 Meg x 32 2 Meg x 32 x 4 4K 4K (A0–A11) 4 (BA0, BA1) 1K (A0–A9) Architecture Configuration Refresh Count Row Addressing Bank Addressing C...


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