Shaanxi Qunli Electric Co.
, Ltd
Add.
:No.
1 Qunli Road,Baoji City,Shaanxi,China
3DG100, 3DG102
NPN Silicon High Frequency Low Power
Transistor
Features: 1.
Using epitaxy planar technology structure.
High working frequency.
Metallic packaging.
2.
Small volume, light weight, easy installation.
3.
Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit.
4.
Quality Class: GS, G.
Implementation of standards: QZJ840611 TECHNICAL DATA:
Specifications Parameter name Total Dissipation Max.
Collector Current Junction Temperature Storage Temperature C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Symbols Unit A B 3DG100 C D A...