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3DG12

Part Number	3DG12
Manufacturer	Shaanxi Qunli Electric
Description	NPN Silicon High Frequency Middle Power Transistor
Published	Jan 12, 2017
Detailed Description	Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG12 NPN Silicon High Frequency Middle...
Datasheet	3DG12 PDF File

Overview

Shaanxi Qunli Electric Co.
, Ltd Add.
:No.
1 Qunli Road,Baoji City,Shaanxi,China 3DG12 NPN Silicon High Frequency Middle Power Transistor Features: 1.
Using epitaxy planar technology structure.
High working frequency.
Metallic packaging.
2.
Small volume, light weight, easy installation.
3.
Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit.
4.
Quality Class: GS, G.
Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Symbols Unit Total Dissipation Ptot mW Max.
Collector Current ICM mA Junction Temperature Tjm °C Storage Temperature Tstg °C C-B Breakdown Voltage V(BR)CBO V C-E Breakdown Voltage V(BR)...

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