DATA SHEET SHEET DATA
SILICON
TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR
DESCRIPTION
The 2SC3356 is an
NPN silicon epitaxial
transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
0.
4 −0.
05
+0.
1
PACKAGE DIMENSIONS (Units: mm)
2.
8±0.
2 1.
5 0.
65 −0.
15
+0.
1
FEATURES
• Low Noise and High Gain
0.
95 0.
95 2.
9±0.
2
NF = 1.
1 dB TYP.
, Ga = 11 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.
0 GHz • High Power Gain MAG = 13 dB TYP.
@VCE = 10 V, IC = 20 mA, f = 1.
0 GHz
2
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Curre...