Gre r Pro
STK103
Ver 1.
1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
100V
ID
2.
0A
R DS(ON) (m Ω) Max
210 @ VGS=10V 312 @ VGS=4.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
D
D
G
S
SOT-89
D G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
Limit 100 ±20 TA=25°C TA=70°C 2.
0 1.
6 11 20 TA=25°C TA=70°C 1.
25 0.
8 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
Operating Junction ...