DatasheetsPDF.com

STK103

SamHop Microelectronics
Part Number STK103
Manufacturer SamHop Microelectronics
Description N-Channel MOSFET
Published Oct 15, 2014
Detailed Description Gre r Pro STK103 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT ...
Datasheet PDF File STK103 PDF File

STK103
STK103

Overview
Gre r Pro STK103 Ver 1.
1 S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 2.
0A R DS(ON) (m Ω) Max 210 @ VGS=10V 312 @ VGS=4.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
D D G S SOT-89 D G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TA=25°C TA=70°C 2.
0 1.
6 11 20 TA=25°C TA=70°C 1.
25 0.
8 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 100 °C/W Details are subject to change without notice.
Jul,13,2011 1 www.
samhop.
com.
tw STK103 Ver 1.
1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V 100 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=1.
00A VGS=4.
5V , ID=0.
82A VDS=10V , ID=1.
00A 1 1.
9 168 231 1.
9 310 38 24 2.
5 210 312 V m ohm m ohm S pF pF pF DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=25V,VGS=0V f=1.
0MHz VDD=50V ID=1.
00A VGS=10V RGEN= 6 ohm VDS=50V,ID=1.
00A,VGS=10V VDS=50V,ID=1.
00A,VGS=4.
5V VDS=50V,ID=1.
00A, VGS=10V 7.
7 9.
2 16 4.
1 5.
6 3.
3 0.
9 1.
7 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERIS...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)