Green Product
STP35N10
Ver 1.
1
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
100V
ID
35A
R DS(ON) (m Ω) Typ
30 @ VGS=10V
FEATURES Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 package.
D
G D S
G
S TP S E R IE S TO-220
S
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a a
Limit 100 ±20 T C =25 °C T C =70 °C TC=25°C TC=70°C 35 29.
3 103 75 52.
5 -55 to 175
Units V V A A A W W °C
Maximum Power Dissipation Operating Junctio...