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STP35N60DM2

STMicroelectronics
Part Number STP35N60DM2
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Mar 13, 2016
Detailed Description STP35N60DM2 N-channel 600 V, 0.094 Ω typ., 28 A MDmesh™ DM2 Power MOSFET in a TO-220 package Datasheet - production dat...
Datasheet PDF File STP35N60DM2 PDF File

STP35N60DM2
STP35N60DM2

Overview
STP35N60DM2 N-channel 600 V, 0.
094 Ω typ.
, 28 A MDmesh™ DM2 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS STP35N60DM2 600 V RDS(on) max.
0.
110 Ω ID PTOT 28 A 210 W  Fast-recovery body diode  Extremely low gate charge and input capacitance  Low on-resistance  100% avalanche tested  Extremely high dv/dt ruggedness  Zener-protected Applications  Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series.
It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Order code STP35N60DM2 Table 1: Device summary Marking 35N60DM2 Package TO-220 Packing Tube September 2015 DocID028348 Rev 1 This is information on a product in full production.
1/13 www.
st.
com Contents Contents STP35N60DM2 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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6 3 Test circuits 8 4 Package information .
9 4.
1 TO-220 type A package information.
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10 5 Revision history .
12 2/13 DocID028348 Rev 1 STP35N60DM2 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter VGS ID IDM(1) PTOT dv/dt(2) dv/dt(3) Tstg Tj Gate-source voltage Drain current (continuous) at Tcase = 25 °C Drain current (continuous) at Tcase = 100 °C Drain current (pulsed) ...


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