Gr Pr
STF8209
Ver 2.
2
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
22.
0 @ VGS=4.
5V 22.
5 @ VGS=4.
0V 20V 6.
5A 23.
5 @ VGS=3.
7V 27.
5 @ VGS=3.
1V 33.
5 @ VGS=2.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G2 S2 G1 S1 S1
P IN 1
Bottom Drain Contact (D1/D2) S2
G1 3 S1 2
T D F N 2X 3
4 G2 5 6 S2 S2
D1/D2
S1
1
(Bottom view)
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a
TA=25°C TA=70°C TA=25°C TA=...