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STF8209

SamHop Microelectronics
Part Number STF8209
Manufacturer SamHop Microelectronics
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published Oct 16, 2014
Detailed Description Gr Pr STF8209 Ver 2.2 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUC...
Datasheet PDF File STF8209 PDF File

STF8209
STF8209

Overview
Gr Pr STF8209 Ver 2.
2 S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 22.
0 @ VGS=4.
5V 22.
5 @ VGS=4.
0V 20V 6.
5A 23.
5 @ VGS=3.
7V 27.
5 @ VGS=3.
1V 33.
5 @ VGS=2.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact (D1/D2) S2 G1 3 S1 2 T D F N 2X 3 4 G2 5 6 S2 S2 D1/D2 S1 1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a TA=25°C TA=70°C TA=25°C TA=70°C Limit 20 ±12 6.
5 5.
2 40 1.
56 1.
00 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 80 °C/W Details are subject to change without notice.
Apr,10,2012 1 www.
samhop.
com.
tw STF8209 Ver 2.
2 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=18V , VGS=0V Min 20 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS= ±12V , VDS=0V 1 ±10 VDS=VGS , ID=1.
0mA VGS=4.
5V , ID=3.
25A VGS=4.
0V , ID=3.
25A VGS=3.
7V , ID=3.
25A VGS=3.
1V , ID=3.
25A VGS=2.
5V , ID=3.
25A VDS=5V , ID=3.
25A 0.
5 16.
0 16.
5 17.
5 19.
0 22.
0 0.
95 19.
0 19.
5 20.
5 23.
0 28.
0 18 1.
5 22.
0 22.
5 23.
5 27.
5 33.
5 V m ohm m ohm m ohm m ohm m ohm S RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Cha...


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