Green Product
SP8009E
Ver 1.
5
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
33V
ID
24A
R DS(ON) (m Ω) Typ
5.
0 @ VGS=10V 6.
5 @ VGS=6V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D D D
P in 1
5 6 7 8
4 3 2 1
G S S S
D
TSON 3.
3 x 3.
3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a
Limit 33 ±20
Units V V A A W °C
TA=25°C TA=25°C
24 72 1.
67 -55 to 150
Maximum Power Dissipation Operating Junction and Storage Temperature ...