DatasheetsPDF.com

SP8006

SamHop Microelectronics
Part Number SP8006
Manufacturer SamHop Microelectronics
Description N-Channel Enhancement Mode Field Effect Transistor
Published Oct 16, 2014
Detailed Description Green Product SP8006 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PROD...
Datasheet PDF File SP8006 PDF File

SP8006
SP8006

Overview
Green Product SP8006 Ver 1.
1 S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 4.
5 @ VGS=4.
5V 4.
7 @ VGS=4.
0V 24V 12.
5A 4.
9 @ VGS=3.
7V 5.
5 @ VGS=3.
1V 6.
0 @ VGS=2.
5V FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.
3 x 3.
3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 24 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 12.
5 10 81 a Units V V A A A W W °C Maximum Power Dissipation 1.
67 1.
07 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 75 °C/W Details are subject to change without notice.
Jul,18,2013 1 www.
samhop.
com.
tw SP8006 Ver 1.
1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS=0V , ID=250uA VDS=20V , VGS=0V 24 1 ±10 V uA uA VGS= ±12V , VDS=0V VDS=VGS , ID=1.
0mA VGS=4.
5V , ID=6.
25A VGS=4.
0V , ID=6.
25A VGS=3.
8V , ID=6.
25A VGS=3.
1V , ID=6.
25A VGS=2.
5V , ID=6.
25A VDS=5V , ID=6.
25A 0.
5 3.
3 3.
5 3.
6 3.
8 4.
0 0.
85 3.
8 4.
0 4.
1 4.
3 4.
5 39 1.
5 4.
5 4.
7 4.
9 5.
5 6.
0 V m ohm m ohm m ohm m ohm m ohm S RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=10V,VGS=0V f=1.
0MHz 2400 422 376 pF pF pF VDD=20V ID=6.
...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)