Green Product
SP8601
Ver 2.
5
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
17.
5 @ VGS=4.
5V 18.
5 @ VGS=4.
0V 20V 7.
2A 20.
0 @ VGS=3.
7V 24.
5 @ VGS=3.
1V 27.
0 @ VGS=2.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D1
D1
D2
D2
S mini 8
P IN 1
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a c c
TA=25°C TA=70°C TA=25°C TA=70°C
Limit 20 ±12 7.
2 5.
8 43 1.
47 0.
94 -55 to 150
Units V V A A A W W...