Green Product
SP8608
Ver 2.
3
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
9.
5 @ VGS=4.
5V 9.
8 @ VGS=4.
0V 20V 12A 10.
5 @ VGS=3.
8V 12.
5 @ VGS=3.
1V 15.
0 @ VGS=2.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D2 D2 D1
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S mini 8
P IN 1
D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a c c
Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 12 9.
6 72 1.
32 0.
84 -55 to 150
Units V...